Hey folks,
I’m building a high-power speaker amplifier and decided to use the IRFP260N. It’s a beast: 200 V drain-source rating, 50 A capability. The MOSFET heats up pretty fast under load, even though the idle current is low. My layout uses long drain traces and the gate drive seems sluggish. I wonder if the trace lengths or gate resistor value are hurting performance. I also have the driver & FET placed close to the speaker output path—maybe noise or inductance is messing things up.
If anyone’s used the IRFP260N in a speaker amp or similar audio build, I’d love your thoughts on gate drive setup (resistor values, gate capacitance) for audio switching workloads. Also on PCB layout tips (trace width, grounding, mounting pad) to keep heat & noise in check. What abt heat-sinking strategies when using it for class-AB or high-power class-D style amps
Thanks in advance.
I’m building a high-power speaker amplifier and decided to use the IRFP260N. It’s a beast: 200 V drain-source rating, 50 A capability. The MOSFET heats up pretty fast under load, even though the idle current is low. My layout uses long drain traces and the gate drive seems sluggish. I wonder if the trace lengths or gate resistor value are hurting performance. I also have the driver & FET placed close to the speaker output path—maybe noise or inductance is messing things up.
If anyone’s used the IRFP260N in a speaker amp or similar audio build, I’d love your thoughts on gate drive setup (resistor values, gate capacitance) for audio switching workloads. Also on PCB layout tips (trace width, grounding, mounting pad) to keep heat & noise in check. What abt heat-sinking strategies when using it for class-AB or high-power class-D style amps
Thanks in advance.
